| PART |
Description |
Maker |
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| TC58NVG2S3ETA00 |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| KVR13LSE9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| KVR13LE9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| KVR13N9S8HK2-8 |
8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
|
List of Unclassifed Man...
|
| HYB25DC512160C |
(HYB25DC512160C / HYB25DC512800C) 512M-Bit DDR SDRAM
|
Infineon Technologies Corporation
|
| MX66L51235FZ2I10G MX66L51235FMI10G MX66L51235FXDI1 |
3V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MC-4R512FKE6D MC-4R512FKE6D-653 MC-4R512FKE6D-745 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HM5259405B-A6 HM5259405B-75 HM5259165B HM5259165B- |
PT 32C 32#20 PIN PLUG
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc.
|
| MX25L51245GMI-10G |
3V, 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
